Schottky diode based on WS2 crossed with PEDOT/PSSA

An easy technique to fabricate a Schottky diode with WS2 and PEDOT-PSSA under ambient conditions is presented. WS2 is an air stable transition metal dichalcogenide semiconductor. When connected as a field effect transistor, WS2 exhibited n-type behavior with a charge mobility of \textasciitilde 7cm2/V-s on SiO2. PEDOT/PSSA is a conducting polymer that can be electro-spun to form fibers with a conductivity of \textasciitilde 1 S/cm. In this work we fabricated a Schottky diode by crossing a CVD grown monolayer WS2 crystal with a single electro-spun PEDOT/PSSA fiber. The resulting diode characteristics were analyzed assuming the standard thermionic emission model of a Schottky junction. Analysis of the results includes the ideality parameter of 4.75, diode rectification ratio \textasciitilde 10, and a turn on voltage of 1.4V. Efforts to investigate if these parameters are tunable with a back gate will also be presented.