Microwave polarization angle study of the radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2D electron system under dc current bias

ORAL

Abstract

Microwave-induced magnetoresistance oscillations followed by the vanishing resistance states are a prime representation of non-equilibrium transport phenomena in two-dimensional electron systems (2DES). The effect of a dc current bias on the nonlinear response of 2DES with microwave polarization angle under magnetic field is a subject of interest. Here, we have studied the effect of various dc current bias on microwave radiation-induced magnetoresistance oscillations in a high mobility 2DES. Further, we systematically investigate the effect of the microwave polarization angle on the magneto-resistance oscillations at two different frequencies 152.78 GHz and 185.76 GHz. This study aims to better understand the effects of both dc current and microwave polarization angle in the GaAs/AlGaAs system, both of which modify the observed magneto-transport properties

Authors

  • Muhammad-Zahir Iqbal

    Georgia State University, Atlanta, GA 30303

  • H-C. Liu

    Georgia State University, Atlanta, GA 30303, Georgia State University, Georgia State Univ

  • M. S. Heimbeck

    Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898, Army Aviation \& Missile RD \& E Center, Redstone Arsenal, Huntsville, AL 35898

  • Henry O. Everitt

    Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898 and Dept. of Physics, Duke University, Durham, NC 27708

  • Werner Wegscheider

    ETH Zurich, Switzerland, ETH Zurich, ETH-Zurich, 8093 Zurich, Switzerland

  • Ramesh G. Mani

    Georgia State University, Atlanta, GA 30303, Georgia State University