Electron Energy Levels in the 1D-2D Transition

ORAL

Abstract

Using GaAs-AlGaAs heterostructures we have investigated the behaviour of electron energy levels with relaxation of the potential confining a 2D electron gas into a 1D configuration. In the ballistic regime of transport, when the conductance shows quantized plateaux, different types of behaviour are found according to the spins of interacting levels, whether a magnetic field is applied and lifting of the momentum degeneracy with a source-drain voltage. We have observed both crossing and anti-crossing of levels and have investigated the manner in which they can be mutually converted. In the presence of a magnetic field levels can cross and lock together as the confinement is altered in a way which is characteristic of parallel channels. The overall behaviour is discussed in terms of electron interactions and the wavefunction flexibility allowed by the increasing two dimensionality of the electron distribution as the confinement is weakened.

Authors

  • Michael Pepper

    London Centre for Nanotechnology, University College London

  • Kumar Sanjeev

    London Centre for Nanotechnology, University College London

  • Kalarikad Thomas

    London Centre for Nanotechnology, University College London

  • Graham Creeth

    London Centre for Nanotechnology, University College London

  • David English

    London Centre for Nanotechnology, University College London

  • David Ritchie

    Cavendish Laboratory, University of Cambridge, United Kingdom, University College London

  • Jonathan Griffiths

    Cavendish Laboratory, University of Cambridge

  • Ian Farrer

    Cavendish Laboratory, University of Cambridge

  • Geraint Jones

    Cavendish Laboratory, University of Cambridge