Experimental preparation of lateral Heterojunction Sb$_{\mathrm{2}}$Te$_{\mathrm{3}}$/Bi$_{\mathrm{2}}$Te$_{\mathrm{3}}$ Nanoplates

For the first time, lateral heterojunction of Sb$_{\mathrm{2}}$Te$_{\mathrm{3}}$-Bi$_{\mathrm{2}}$Te$_{\mathrm{3}}$ was successfully realized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states. The relevant works on materials optimization and fabrication of spin devices are already under way. (Nanoletters 2015, 15, 5905$-$5911))