Study of magnetotransport across the neutrality point in CVD graphene

Hall effect compensation and a residual resistivity $\rho_{xx} \approx h/4e^{2}$ are experimentally examined over the p$\leftrightarrow$n transition about the nominal Dirac point in CVD graphene. The observed characteristics are reproduced in a model with a parabolic distribution $f(V_{N})$ of neutrality potentials, $V_{N}$, and simultaneous electron- and hole- conduction. The results suggest that, broadly about the gate-induced n $\leftrightarrow$ p transition, charge transport is characterized by domain confined ambipolar currents, which leads to compensation in the global Hall effect and the observed residual resistivity.