Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

ORAL

Abstract

For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

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Authors

  • Danhong Huang

    Air Force Rsch Lab-Kirtland

  • Andrii Iurov

    Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA, University of New Mexico

  • Godfrey Gumbs

    Hunter College of the City University of New York, NY, Department of Physics and Astronomy, Hunter College, CUNY, New York, NY 10065, Hunter College of City University of New York, 695 Park Avenue, New York, NY 10065, USA, Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, NY 10065, Hunter College of the City University of New York

  • David Cardimona

    Air Force Rsch Lab-Kirtland

  • Sanjay Krishna

    University of New Mexico