Modification of electron spin properties in a GaAs epilayer by an in-plane electric field

The interaction of electron spins with accelerating electric fields in bulk gallium arsenide results in many effects that are relevant to proposed spin-based devices. For example, in-plane electric fields have been shown to change the g-factor\footnote{M. Luengo-Kovac et al., {\it Phys. Rev. B} {\bf 91}, 201110 (2015)}, generate spin polarization\footnote{B. M. Norman et al., {\it Phys. Rev. Lett.} {\bf 112}, 056601 (2014)}, and decrease the spin lifetime\footnote{M. Furis et al., {\it Appl. Phys. Lett.} {\bf 89}, 102102 (2006)}. Most such studies have used only very low electric fields, typically less than 100 V/cm. We investigate the dependence of spin lifetime on electric field at high electric fields and separate the contribution due to heating.