Ultra-thin single crystal perovskite ferroelectric on Silicon.

Single crystalline ultra-thin films (sub-10 nm) of ferroelectric complex oxides are important for tunnelling memory [1] devices. Commercially viable realization of such devices requires their integration with the peripheral Si-based input-output electronics. Integration of single crystalline films of such oxides using direct synthesis remains challenging due to the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. In this work we report epitaxial transfer of ultra-thin single crystalline, oxide films (down to 1 unit cell) onto Si substrates, at room temperature. The thickness of the transferred films has been confirmed by atomic force microscopy. Piezoelectric force microscopy shows ferroelectric property is retained in the transferred film. Electrical transport studies on these transferred ultra-thin films are ongoing. [1] Z. Wen, C. Li, D. Wu, A. Li and N. Ming, Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. Nat. Mater. 12, 617 (2013)