Magnetocrystalline anisotropy ``space'' distribution over atoms from different first principles approaches
ORAL
Abstract
Interplays between bulk vs interface and electron hybridization vs stress contributing into the magnetocrystalline anisotropy are studied from first pronciples. Fe/MgO system is considered as example with variable Fe thickness. The effect of stress is modeled by consideration of a number of fixed in-plane lattice parameters with full relaxation in z-direction. Different approaches to calculate separate atom contributions into the total magnetocrystalline anisotropy are compared and controversies are discussed
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Authors
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Roman Chepulskyy
New Memory Technology, Samsung Semiconductor R\&D Center, Samsung Electronics
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Dmytro Apalkov
New Memory Technology, Samsung Semiconductor R\&D Center, Samsung Electronics