Charge Transport of MoS$_2$ Supported by Thiol-Decorated Self-Assembled Monolayer
ORAL
Abstract
Intrinsic charge transport in MoS$_2$ supported by thiols was recently reported [1] and was attributed to passivation of sulfur vacancies and suppression of charged impurities from the dielectric substrate. In this talk we will present the transport characteristics of single layer and few-layer MoS$_2$ on thiol-decorated self-assembled alkyl-siloxane monolayer. \\[4pt] [1] Z. Yu \textit{et al.}, \textit{Towards intrinsic charge transport in monolayer ?molybdenum disulfide by defect and interface engineering} Nature Commun. \textbf{5}(2014).
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Authors
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Doron Naveh
Bar-Ilan University, Dept. of Electrical Engineering, Bar-Ilan University, Ramat-Gan, Israel 52900
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vlada Artel
Dept. of Electrical Engineering, Bar-Ilan University, Ramat-Gan, Israel 52900
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Moshe Kirshner
Dept. of Electrical Engineering, Bar-Ilan University, Ramat-Gan, Israel 52900