Large-scale Synthesis of monolayer MoSe$_{2}$ via Chemical Vapor Deposition

Molybdenum diselenide (MoSe$_{2})$ has a direct band gap of 1.55eV for a monolayer utilized photodetctor and optoelectronics. Recently, its synthesis methods have been briskly researched as a material for electronic devices from reason why it has similar properties with molybdenum disulfide (MoS$_{2})$. We present synthesis method for large-scale monolayer MoSe$_{2}$ through the chemical vapor deposition using Se and MoO$_{3}$ powder as a precursor. Raman and X-ray photoelectron microscopy confirmed the quality of synthesized MoSe$_{2}$. Moreover, electrical property was investigated with field effect transistor.