Spin relaxation time dependence on optical pumping in GaAs:Mn

We analyze the dependence of electron spin relaxation time on optical pumping in a partially-compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations [1]. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10$^{17}$cm$^{-3}$ [2]. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.\\[4pt] [1] V. Burobina and Ch. Binek, J. Appl. Phys. 115, 163909 (2014).\\[0pt] [2] G. V. Astakhov et al., Phys. Rev. Lett. 101, 076602 (2008).