Transport in graphene on boron nitride

ORAL

Abstract

The lattice mismatch and twist angle of graphene on boron nitride contributes to a long wavelength moire pattern in the atomic positions. This superlattice structure and the sublattice symmetry breaking in the hexagonal boron nitride layer lead to observable transport features in the graphene layer. We show a decreased conductivity at the Dirac point due to an opening of the band gap. There is also a decreased conductivity when the Fermi level is tuned to four carriers per moire unit cell, which is the position of the secondary Dirac points in perfectly matched and sublattice symmetric hexagonal bilayers. We show both intraband and interband contributions to the conductivity, the latter is peaked when the Fermi level is tuned inside the gaps, either at the Dirac point or the secondary Dirac points.

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Authors

  • Ashley DaSilva

    University of Texas at Austin, Department of Physics, The University of Texas at Austin

  • Jeil Jung

    National University of Singapore, Department of Physics, National University of Singapore

  • Shaffique Adam

    Yale-NUS College, Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, and Department of Physics, National University of Singapore, Yale NUS College and National University of Singapore, National University of Singapore, Yale-NUS college, Graphene Research Centre and Department of Physics, National University of Singapore, Yale-NUS College, Center for Advanced 2D materials and Graphene Research Center, and Department of Physics, National University of Singapore, Yale-NUS College and National University of Singapore

  • Allan MacDonald

    University of Texas at Austin, Department of Physics, The University of Texas at Austin, Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA