Surface Dangling Bonds Are a Cause of Type-II Blinking in Si Nanoparticles

ORAL

Abstract

Exponential blinking statistics was reported in oxidized Si nanoparticles and the switching mechanism was attributed to the activation and deactivation of unidentified nonradiative recombination centers. Using ab initio calculations we predicted that Si dangling bonds at the surface of oxidized nanoparticles introduce defect states which, depending on their charge and local stress conditions, may give rise to ON and OFF states responsible for exponential blinking statistics. Our results are based on first principles calculations of charge transition levels, single particle energies, and radiative and nonradiative lifetimes of dangling bond defects at the surface of oxidized silicon nanoparticles under stress.

–

Authors

  • Nicholas Brawand

    Univ of Chicago

  • Marton Voros

    Univ of Chicago

  • Giulia Galli

    The University of Chicago, Institute for Molecular Engineering, the University of Chicago, University of Chicago, Institute for Molecular Engineering, Institute for Molecular Engineering, University of Chicago, Univ of Chicago, Institute for Molecular Engineering, The University of Chicago; Materials Science Division, Argonne National Laboratory, University of Chicago, Institute for Molecular Engineering, University of Chicago, USA, The Institute for Molecular Engineering, The University of Chicago