Elastic coupling between the layers in 2D films

ORAL

Abstract

Two-dimensional (2D) materials, such as graphene and graphene oxide, are a few-atomic-layer thick films with strong in-plane bonds and much weaker inter-layer interactions. While their in-plane elasticity has been widely studied in bending experiments where a suspended film is largely deformed, very little is known about their elastic modulus perpendicular to the planes. Investigations of the out-of-plane elasticity require indenting supported 2D films less than their interlayer distance. Here, we report on sub-{\AA}-resolution indentation measurements of the perpendicular elasticity of 2D materials. Experiments, combined with semi-analytical models and density functional theory are used to study the perpendicular elasticity of a few-layers thick graphene and graphene oxide films. Interestingly, we find that the graphene oxide perpendicular Young's modulus reaches a maximum when one complete water layer is intercalated between the graphitic planes then the perpendicular Young's modulus decreases because a second water layer starts to form in between the layers further swelling and softening the GO structure.

Authors

  • Yang Gao

    School of Physics, Georgia Institute of Technology

  • Si Zhou

    School of Physics, Georgia Institute of Technology

  • Suenne Kim

    Department of Applied Physics, Hanyang University

  • Hsian-Chih Chiu

    National Taiwan Normal University

  • Daniel N\'elias

    Universit\'e de Lyon, CNRS, INSA-Lyon, LaMCoS

  • Claire Berger

    School of Physics, Georgia Institute of Technology

  • Walt de Heer

    Georgia Inst of Tech, Georgia Institute of Technology, School of Physics, Georgia Institute of Technology

  • Roman Sordan

    L-NESS, Department of Physics, Politecnico di Milano

  • Laura Polloni

    L-NESS, Department of Physics, Politecnico di Milano

  • Angelo Bongiorno

    School of Physics, Georgia Institute of Technology

  • Elisa Riedo

    School of Physics, Georgia Institute of Technology, Georgia Institute of Technology