Gaussian distribution of inhomogeneous barrier height in Al/p-GaAs Schottky Barrier Diodes (SBDs)

The forward bias current-voltage (I-V) characteristics of Al/p-GaAs SBDs have been investigated in the temperature range of 240-360 K. The main electrical parameters such as zero-bias barrier height ($\Phi_{Bo})$, ideality factor ($n)$ and series resistance ($R_{s})$ determined from the forward bias I-V data. These values are strong function of temperature and voltage. The analysis of I-V data based on the thermionic emission (TE) mechanism show that while the $n$ decreases, the $\Phi_{Bo}$ and $R_{s}$ increases with increasing temperature. $\Phi_{\mathrm{Bo}}$ and n versus q/2kT plots were drown to obtain an evidence of GD of BH. The mean value of BH and standard deviation ($\sigma_{\mathrm{o}})$ values were found from the intercept and slope of $\Phi_{\mathrm{Bo}}$ vs q/2kT plot, respectively. Furthermore, the mean value of BH and the effective Richardson constant A* were obtained from the intercept and slope of the modified ln(I$_{\mathrm{o}}$/T$^{2})$-q$^{2}\sigma _{\mathrm{0}}^{2}$/2(k${\rm T})^{2}$ versus q/kT plot. The obtained value of A* is closed to theoretical value of p-GaAs. As a result, the I-V characteristics in Al/p-GaAs successfully have been explained based on TE theory with GD of BHs.