Emerging Modified Transverse-Field Ising Model On A Hydrogenated Silicon Surface

Advances in the precise placement of dangling bonds on a hydrogenated silicon surface open the prospect of manufacturing large scale quantum dot arrays. Small clusters of specifically arranged quantum dots comprise a system of bistable, interacting cells. Starting from an extended Hubbard model and using a set of controlled Hilbert space truncations, we show that such a system of quantum dot cells can be mapped to a modified transverse-field Ising model with long-ranged interactions. Each cell is described by a pseudo-spin. Because we control cell orientation and placement, we can construct a wide range of structures, with ferromagnetic and antiferromagnetic chains as simple examples. The Ising-like model is amenable to stochastic series expansion Monte Carlo, allowing the simulation and characterization of large systems.