Effect of annealing on electronic carrier transport properties of gamma-irradiated AlGaN/GaN high electron mobility transistors

ORAL

Abstract

AlGaN/GaN High Electron Mobility Transistors were irradiated with $^{\mathrm{60}}$Co gamma-ray doses from 100Gy to 1000Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature dependent Electron Beam Induced Current (EBIC) measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energy related to radiation-induced defects due to nitrogen vacancies. Later, the devices were annealed at 200$^{\mathrm{o}}$ C for 25 minutes. All the measurements were performed again to study the effect of annealing on the gamma-irradiated devices. Annealing of gamma-irradiated transistors shows that partial recovery of device performance is possible at this temperature. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation and annealing on transfer, gate and drain characteristics.

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Authors

  • Anupama Yadav

    Department of Physics, University of Central Florida

  • Casey Schwarz

    Department of Physics, University of Central Florida

  • Max Shatkhin

    Department of Physics, University of Central Florida

  • Luther Wang

    Department of Physics, University of Central Florida

  • Elena Flitsiyan

    Department of Physics, University of Central Florida

  • Leonid Chernyak

    Department of Physics, University of Central Florida

  • Lu Liu

    Department of Chemical Engineering, University of Florida

  • Ya Hwang

    Department of Chemical Engineering, University of Florida

  • Fan Ren

    Department of Chemical Engineering, University of Florida

  • Stephen Pearton

    Department of Materials Science and Engineering, University of Florida