The origin and distribution of phosphorus in large size HP-Ge crystals

ORAL

Abstract

The high-purity germanium (HP-Ge) crystals with 12 cm in diameter were grown by the Czochralski method in highly pure hydrogen (6N) atmosphere. Phosphorus is one of the important shallow level donors in the grown HP-Ge crystals. The radial and axial distribution of phosphorus in the grown crystals was studied using Hall Effect and Photo-thermal ionization spectroscopy (PTIS). The effect of pulling rate and rotation speed on segregation coefficient of phosphorus in HP-Ge was investigated. The origin of phosphorus was analyzed. We report the results in this paper.

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Authors

  • Guojian Wang

    Univ of South Dakota, Department of Physics, University of South Dakota

  • Hao Mei

    Department of Physics, University of South Dakota

  • Gang Yang

    Univ of South Dakota, University of South Dakota, Department of Physics, University of South Dakota

  • Jayesh Govani

    Univ of South Dakota, University of South Dakota, Department of Physics, University of South Dakota

  • Mianliang Huang

    Department of Physics, University of South Dakota

  • Yutong Guan

    Department of Physics, University of South Dakota

  • Dongming Mei

    Univ of South Dakota, Department of Physics, University of South Dakota