Epitaxial growth of Bi$_2$Te$_3$ on the Ferromagnetic Insulator Cr$_2$Ge$_2$Te$_6$

ORAL

Abstract

We report the experimental realization of a new topological insulator-ferromagnetic insulator (TI-FI) material system: the Cr$_2$Ge$_2$Te$_6$-Bi$_2$Te$_3$ heterostructure. The layered chalcogenide FI Cr$_2$Ge$_2$Te$_6$ exhibits a high Curie temperature of 61 K and a resistivity greater than $10^3$ $\Omega$-cm below 77 K, which suit it well for the study of magnetic proximity effects in TI-FI heterostructures. We fabricate heterostructures by growing single crystalline Cr$_2$Ge$_2$Te$_6$ substrates and depositing Bi$_2$Te$_3$ thin films using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy reveals a sharp interface along the (0 0 1) planes of the two crystals, with the structures uniformly oriented as Cr$_2$Ge$_2$Te$_6$[1$\bar 1$0]//Bi$_2$Te$_3$[0$\bar 1$0]. The coupling between the Cr$_2$Ge$_2$Te$_6$ and Bi$_2$Te$_3$ layers is studied via the anomalous hall effect.

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Authors

  • L.D. Alegria

    Princeton University Physics Department

  • Huiwen Ji

    Princeton University Chemistry Department, Department of Chemistry, Princeton University

  • N. Yao

    Princeton Institute for the Science and Technology of Materials

  • Robert Cava

    Department of Chemistry, Princeton University, Department of Chemistry, Princeton university, Princeton NJ 08544 USA, Princeton University Chemistry Department, Institute for Quantum Matter, Princeton University, Department of Chemistry, Princeton University, NJ, 08544, USA, Princeton University

  • J.R. Petta

    Princeton University, Princeton University Physics Department, Department of Physics, Princeton University