Carbon nanotube- MoS2 p-n junction: Fabrication and transport properties

Integrating two different nanoscale semicondcutors of opposite carrier types are of great interest for many electronic and optical applications. Few layers molybdenum disulfide (MoS$_{2})$ is an n-type semiconductor while semiconductoing single walled carbon nanotubes (SWNT) show p-type behavior. In this work, we demonstrate a simple technique for integrating these two semiconductors for fabricating a p-n junction. Few layers MoS$_{2}$ device were mechanically exfoliated from a single crystal of MoS$_{2}$ and making electrical contact via electron beam lithography. Another pair of electrodes, which are orthogonal to MoS$_{2}$ device, is deposited and semiconducting reach SWNT(s-SWNT) solution was dielectrophoretically assembled between the second pair of electrodes. The s-SWNT goes over the MoS$_{2}$ and fabricates two p-n junctions. We will discuss the electronic transport properties of the fabricated devices.