Transport Properties of Topological 1D Zero-Line Mode in Graphene

ORAL

Abstract

When the inversion symmetry of graphene systems is broken, e.g. graphene subjected to a staggered sublattice potential or bilayer under an applied interlayer potential difference, a bulk band gap opens to support the quantum valley-Hall state. When the potential varies spatially, a topological one-dimensional conducting channel is formed along the zero-line of the potential. We find that such a state shows the property of zero bend resistance. And if two straight zero lines crosses, we show that the splitting of the zero line mode obeys a counterintuitive current partition law. We provide a theory to understand the physics behind these novel characteristics.

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Authors

  • Zhenhua Qiao

    University of Science and Technology of China, Hefei, Anhui 230026, China

  • Jeil Jung

    National University of Singapore, Singapore, Graphene Research Centre and Department of Physics, National University of Singapore, National University of Singapore

  • Chungwei Lin

    Department of Physics, University of Texas at Austin, University of Texas at Austin, Austin, Texas 78712, USA

  • Allan MacDonald

    The University of Texas at Austin, Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA, Department of Physics, The University of Texas at Austin, Austin, TX, 78712, Department of Physics, University of Texas at Austin, University of Texas at Austin, University of Texas at Austin, Austin, Texas 78712, USA, UT Austin, Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • Qian Niu

    University of Texas at Austin, UT Austin, Department of Physics, University of Texas at Austin, University of Texas at Austin, Austin, Texas 78712, USA, The University of Texas at Austin, Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA