Mn-doped monolayer MoS$_2$: An atomically thin dilute magnetic semiconductor

ORAL

Abstract

We investigate the electronic and magnetic properties of Mn-doped monolayer MoS$_{2}$ using a combination of first-principles density functional theory (DFT) calculations and Monte Carlo simulations. Mn dopants that are substitutionally inserted at Mo sites are shown to couple ferromagnetically via a double-exchange mechanism. This interaction is relatively short ranged, making percolation a key factor in controlling long-range magnetic order. The DFT results are parameterized using an empirical model to facilitate Monte Carlo studies of concentration- and temperature-dependent ordering in these systems, through which we obtain Curie temperatures in excess of room temperature for Mn doping in the range of 10--15{\%}. Our studies demonstrate the potential for engineering a new class of atomically thin dilute magnetic semiconductors based on Mn-doped MoS$_{2}$ monolayers.

Authors

  • Doron Naveh

    Department of Electrical Engineering and The Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel

  • Ashwin Ramasubramaniam

    Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA, University of Massachusetts Amherst