High performance MoS$_{2}$ Field-Effect Transitors in a simple design

The discovery of graphene, with its rich and fascinating physical properties, has opened up a new world where 2D-layered materials is the platform for developing powerful devices. Molybdenum disulfide (MoS$_{2})$, a 2D material belonging to the family of transition metal dichalcogenides, has an intrinsic band-gap and strong spin-orbit coupling which would complement those applications pristine graphene cannot cover. In particular, MoS$_{2}$ has been shown to work well as a field-effect transistor (FET), to exhibit superconductivity and valley polarization, demonstrating its potential in spintronics, valleytronics, or for designing other novel devices. Here we will show high performance of FETs based on monolayer and a few layer MoS$_{2\, }$working with a simple design (Si/SiO2 back gate and two terminal configuration). The FETs show room temperature ON/OFF ratios exceeding 10$^{7}$ and with mobilities higher than 10 cm$^{2}$V$^{-1}$s$^{-1}$. These values are among the best previously reported ones in similar designs and support the viability of building up simpler but still powerful devices which would allow large scale fabrication suitable for nanoelectronics. Further investigations exploiting both spintronics and valleytronics of layered MoS$_{2}$ are the final goal of this work.