The changes in surface states in SmB$_{6}$ depending on non-magnetic/magnetic dopants

After the metallic surface states in SmB$_6$ have given rise to the constant resistivity at \textit{T} $<$ 4 K [1], it has received intensive attention because SmB$_6$ can be a topological insulator that possesses strongly correlated electrons in contrast with the 3D band topological insulators, \textit{i.e.} Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$. Here, we show the differences of electrical transport properties in high-quality single crystals of Sm$_{1-x}$\textit{R}$_x$B$_6$ (\textit{R} = La, Ce) which are synthesized using high-temperature \textit{Al} solution growth methods. When non-magnetic La ion 3\% is doped in SmB$_6$, the surface states are maintained, but, when magnetic Ce ion 3\% is doped, they are destroyed. Our results indicate that these are topological surface states that are sensitive to magnetic ion, which is breaking time reversal symmetry. Moreover, we will discuss about quantum percolation limit obtained from the electric properties of Sm$_{1-x}$La$_x$B$_6$ (x = 0, 0.03, 0.1, 0.2, 0.25, 0.3, 0.35, 0.6, 0.8, 0.9), and the resistivity vs. temperature of doped SmB$_6$ in detail.\\[4pt] [1] Wolgast, S. \textit{et al.} Low temperature surface conduction in the Kondo insulator SmB$_6$, arXiv:1211.5105 (2012)