Transient Rayleigh Scattering Spectroscopy measurement of Carrier Dynamics in Zincblende and Wurtzite Indium Phosphide nanowires

ORAL

Abstract

Pump-probe transient Rayleigh spectroscopy is used to study the carrier dynamics of ZB {\&} WZ InP nanowires. Utilizing a wavelength-tunable pulse laser as probe and by adjusting the pump-probe pulse time delay, the change of the Rayleigh scattering efficiency as a function of excitation energy and time delay is measured from a single nanowire. The results are analyzed using an absorption coefficient calculated by a band-to-band transition model and the index of refraction obtained by the Kramers-Kronig relation. The temperature of the electron-hole plasma (EHP) cools via the emission of longitudinal optic (LO) and acoustic phonons. The LO phonon cooling dominates at early times when the carrier temperatures are high, after which the acoustic phonon interactions begins to dominate. The carrier concentrations of the split-off band in ZB InP and C band in WZ InP appears to be 1-2 orders of magnitude smaller than that of the HH, LH or A, B valence bands. Such measurements provide a detailed picture of electron and hole densities and temperatures as a function of time after excitation.

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Authors

  • Yuda Wang

    University of Cincinnati

  • Mohammad Montazeri

    Dep. of Electrical Engineering, University of California, Los Angeles, CA 90095, University of California, Los Angeles, University of Cincinnati

  • Howard Jackson

    University of Cincinnati

  • Leigh Smith

    University of Cincinnati, Department of Physics, University of Cincinnati, Ohio 45221-0011, USA

  • Jan Yarrison-Rice

    University of Cincinnati, Department of Physics, Miami University, Oxford, Ohio 45056, USA

  • Tim Burgess

    Australian National University

  • Suriati Paiman

    Australian National University

  • H. Hoe Tan

    Australian National University, Department of Electronic and Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia

  • Qiang Gao

    Australian National University, Canberra, Australia, Department of Electronic Materials Engineering, Australian National University, Canberra, Australia, Australian National University, Department of Electronic and Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia

  • Chennupati Jagadish

    Australian National University, Department of Electronic and Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia