A differential spin current detection scheme

We offer an alternative scheme to detect spin polarization of conduction electrons injected into a nonmagnetic metal or degeneratively doped semiconductor using transport to two oppositely polarized ferromagnetic metal contacts. We show that, as in the well-known spin injection problem, detection efficiency can be amplified by the addition of spin-selective tunneling barriers. Considering the appropriate geometry and achievable injection rates, we estimate that the differential current can be as high as 1-10?nA for reasonable design parameters. We will also discuss the realization of this detection scheme in laboratory set-ups.