Electronic Properties of Cu$_x$TiSe$_2$ Single Crystals
ORAL
Abstract
We investigate the normal state and superconducting properties of 1T-TiSe$_2$ family of single crystals intercalated with different level of copper content. Magnetoresistance and Hall effect data indicate that 1T-TiSe$_2$ is a compensated narrow band-gap semiconductor or semimetal with small number of electron and hole carriers. We compare the influence of copper intercalant and titanium interstiatials on the temperature evolution of charge density waves via resistivity and Hall effect measurements. Our findings indicate that the origin of the charge density waves in 1T-TiSe$_2$ is due to the combination of exciton and Jahn-Teller mechanisms. At higher copper concentrations we investigate the superconducting properties of Cu$_x$TiSe$_2$ in overdoped regime and find that the system is a single-gap strongly type-II superconductor with in-plane Ginzburg-Landau parameter reaching 50.
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Authors
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Petra Barancekova Husanikova
Drexel University and IEE, Slovak Academy of Sciences, Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia
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Jan Fedor
IEE, Slovak Academy of Sciences
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Jan Derer
IEE, Slovak Academy of Sciences
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Vladimir Cambel
IEE, Slovak Academy of Sciences
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Goran Karapetrov
Drexel University, Department of Physics, Drexel University, 3141 Chestnut St., Philadelphia, PA 19104, USA