Impact of charged impurity scattering in carbon nanotubes

ORAL

Abstract

We have measured the transport property of carbon nanotubes as a function of density of charged impurities. Length-dependent resistance measurements were used to eliminate the contribution from the contact resistance in our data. By knowing the exact density of charged impurities on nanotubes, we measure the scattering cross section of individual adsorbed charge impurity. Measurements on different nanotubes are used to reveal the effect of pseudospin conservation on electronic transport in metallic and semiconducting carbon nanotubes upon addition of long-range impurities experimentally. These findings will be outlined in this talk.

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Authors

  • Ryuichi Tsuchikawa

    Department of Physics and Nanoscience Technology Center, University of Central Florida

  • Jonathan Edmiston

    Department of Physics and Nanoscience Technology Center, University of Central Florida

  • Daniel Heligman

    Department of Physics and Nanoscience Technology Center, University of Central Florida

  • Masahiro Ishigami

    Department of Physics and Nanoscience Technology Center, University of Central Florida

  • Xiao Guo

    Department of Mechanical Engineering, Columbia University

  • Zhengyi Zhang

    Department of Mechanical Engineering, Columbia University, Department of Mechanical Engineering,Columbia University

  • James Hone

    Department of Mechanical Engineering, Columbia University