Accurate effective model Hamiltonian for non-commensurate graphene on hexagonal boron nitride substrate

ORAL

Abstract

High quality hexagonal boron nitride (h-BN) crystals have emerged as a promising substrate and barrier-material for graphene nanoelectronic devices. The influence of the h-BN substrate on graphene's electronic properties is sometimes observable, but often extremely weak. We develop a theory of the h-BN graphene interaction that is based on first-principles electron tunneling amplitudes calculated as a function of horizontal displacement between commensurate honeycomb lattices. The effective Hamiltonian we derive is valid for arbitrary rotation angles between adjacent graphene and h-BN sheets.

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Authors

  • Jeil Jung

    The University of Texas at Austin

  • Zhenhua Qiao

    The University of Texas at Austin, Department of Physics, The University of Texas at Austin, Austin, Texas, USA

  • Allan MacDonald

    The University of Texas at Austin, Department of Physics, University of Texas at Austin, University of Texas Austin, University of Texas at Austin, Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA