High on/off ratio field effect transistor based on exfoliated crystalline SnS$_{2}$ nano-membrane

ORAL

Abstract

We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS$_{2}$, which exhibit an On/Off ratio exceeding 2x10$^{6}$ and a carrier mobility of $\sim$ 1 cm$^{2}$V$^{-1}$s$^{-1}$. The results demonstrate the great potential of SnS$_{2}$, a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gap.

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Authors

  • Debtanu De

    Department of Physics, Texas Center for Superconductivity, University of Houston

  • John Manongdo

    Department of Chemistry, Texas Center for Superconductivity, University of Houston

  • Sean See

    Department of Chemistry, Texas Center for Superconductivity, University of Houston

  • Vincent Zhang

    Department of Physics, Texas Center for Superconductivity, University of Houston

  • Arnold Guloy

    Department of Chemistry and TCSUH, University of Houston, Houston, TX 77204, USA, Department of Chemistry, Texas Center for Superconductivity, University of Houston

  • Haibing Peng

    Department of Physics, Texas Center for Superconductivity, University of Houston