All-thin-film multiferroic heterostructured cantilevers in linear and nonlinear dynamic regimes

ORAL

Abstract

We report on fabrication and characterization of all-thin-film multiferroic magnetoelectric (ME) cantilever devices and their different modes of operation in both linear and nonlinear dynamic regimes. The devices are built on micro-electromechanical system (MEMS) platforms that involve stress-engineered designs based on \textit{silicon oxide/nitride/oxide (ONO)} stacks. The ME layers consist of a magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin film and a Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_{3}$ piezoelectric thin film. The resonant frequency was found to display DC magnetic field dependence indicative of the interplay between the anisotropy and Zeeman energies. In the magnetically-driven mode, the harvested peak power at 1 \textit{Oe} is 0.7\textit{ mW/cm}$^{3}$ (RMS) at the resonant frequency (\textit{3.8 kHz}) and the quality factor also displays strong dependence on the DC magnetic bias. In certain conditions, the multiferroic devices show nonlinear behaviors important to logic implementation and parametric amplification.

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Authors

  • Tiberiu-Dan Onuta

    Materials Science and Engineering Department, University of Maryland, College Park

  • Yi Wang

    Physics Department, University of Maryland, College Park

  • Samuel Lofland

    Physics Department, Rowan University, NY, Rowan University Department of Physics and Astronomy, Department of Physics and Astronomy, Rowan University

  • Christian J. Long

    Physics Department, University of Maryland, College Park

  • Ichiro Takeuchi

    University of Maryland - Department of Materials Science and Engineering, University of Maryland, College Park, Department of Materials Science and Engineering, University of Maryland, College Park, MD 20424, Materials Science and Engineering Department, University of Maryland, College Park, MSE Department and CNAM, UMD College Park