Vapor-Liquid-Solid Synthesis of Bi$_2$Te$_3$ Nanowires via Metalorganic Chemical Vapor Deposition

Bi$_2$Te$_3$ is a topological insulator and high figure-of-merit thermoelectric material. In the context of thermoelectrics, the synthesis of ultra-thin nanowires could enable more efficient energy conversion technologies due to quantum confinement. We describe a route for the synthesis of Bi$_2$Te$_3$ nanowires using low-pressure metalorganic chemical vapor deposition (MOCVD). The combination of metalorganic precursors trimethyl bismuth and diisopropyl telluride allow a low 350$^\circ$C growth temperature that is conducive to nanowire formation. The nanowires form by VLS growth from gold nanoparticles deposited on a growth substrate. Structural and chemical characterizations of the growth products are presented, indicating that the nanowires are high quality, single crystals of Bi$_2$Te$_3$.