Relationship between shallow donors and H impurities in In$_{2}$O$_{3}$ from their behavior upon annealing

Indium oxide is a transparent conducting oxide used widely in modern electronics [1]. Theory predicts that interstitial H and H trapped by an oxygen vacancy act as shallow donors [2]. We have introduced H into In$_{2}$O$_{3}$ single crystals to produce O-H centers and also the broad IR absorption arising from free carriers. To investigate the relationship between the O-H centers and the shallow donors that are introduced by H, we have studied the annealing behavior of the O-H local vibrational modes and the free-carrier absorption by IR spectroscopy to determine how these spectral features are correlated. [1] M. McCluskey \textit{et al.}, J. Mater. Res. \textbf{27}, 2190 (2012) [2] S. Limpijumnong \textit{et al.}, Phys. Rev. B \textbf{80}, 193202 (2009).