Topological Proximity Effects in Graphene Nanoribbon Heterostructures

ORAL

Abstract

Topological insulators (TI) are bulk insulators that possess robust chiral conducting states along their interfaces with normal insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to many exotic physical phenomena. Here we establish the potential existence of ``topological proximity effect'' at the interface of a topological graphene nanoribbon (GNR) and a normal GNR. Specifically, we show that the location of the topological edge states exhibits versatile tunability as a function of the interface orientation, as well as the strengths of the interface coupling and spin-orbit coupling in the normal GNR. For zigzag and bearded GNRs, the topological edge state can be tuned to be either at the interface or outer edge of the normal ribbon. For armchair GNR, the potential location of the topological edge state can be further enriched to be at the edge of or within the normal ribbon, at the interface, or diving into the topological GNR. We also discuss potential experimental realization of the predicted topological proximity effects, which may pave the way for integrating the salient functionality of TI and graphene in future device applications.

Authors

  • Gufeng Zhang

    Univ. of Sci. \& Tech. of China, Fudan University

  • Xiaoguang Li

    Fudan University, Fudan University, Univ. of Sci. \& Tech. of China

  • Guangfen Wu

    Univ. of Sci. \& Tech. of China, Shenzhen Institutes of Advanced Technology

  • Jie Wang

    ICQD, University of Science and Technology of China, Univ. of Sci. \& Tech. of China

  • Dimitrie Culcer

    ICQD, University of Science and Technology of China, Univ. of Sci. \& Tech. of China

  • Efthimios Kaxiras

    School of Engineering and Applied Sciences, Harvard University and Department of Physics, Harvard University, Department of Physics and School of Engineering and Applied Sciences, Harvard University, Physics Department, Harvard University, Cambridge, MA, Harvard University, Department of Physics, Harvard University

  • Zhenyu Zhang

    University of Science and Technology of China, ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China, Univ. of Sci. \& Tech. of China, Harvard University, Univ of Science \& Technology of China \& Univ of Texas at Austin, ICQD, Hefei National Laboratory for Physical Sciences at Microscales, University of Science and Technology of China, ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China