Nature of Charge Compensation Mechanism in Devices with Polar Catastrophe

Polar catastrophe (PC) is well-known in surface science driving a charge compensation mechanism (CCM) at surface/interface, with properties unfound in natural solids [1]. Combining PC with superlattice and resonant tunneling, new device opportunity is wide opened. The strange results of oscillations in conductance, between two limits of $G=gG_{o} $ with $g=2,...$in units of $G_{o} =e^{2}/h=39\mu S$, and hysteresis, were observed in nano-sized (tens of nm) crystalized silicon in amorphous silicon matrix, having native oxides, can be explained [2]. Recent observation of substantial enhanced mobility for very large transfer of carrier from Gd$_{2}$O$_{3}$ (100) / Si(100), in the order of $n\sim 10^{20}$ cm$^{-3}$ near the interface may apply to high current MOSFET [3]. The field of PC is dominated by heterostructures. 3D structures are lacking defined interfacial orientation; it is compatible with the CCM incorporating resonant tunneling.\\[4pt] [1] Hwang et al., Nat Mater 11 (2), 103(2012).\\[0pt] [2] Thesis, X. Li, 1993, UNC Charlotte; Thesis, A. Bowhill, 1994, UNC Charlotte; Tsu, Superlattice to nanoelectronics, 2$^{\mathrm{nd}}$ (2011) Elsevier\\[0pt] [3] W. Sitaputra, R. Tsu, (2012). Submitted.