Vertical Transport Properties of Graphene/h-BN Hetrostructures

ORAL

Abstract

We present results of extensive first principles, studying the scaling behaviour of inter-layer tight-binding hopping parameters in vertical graphene/h-BN heterostructures. We focus, in particular, on the dependence of these parameters on orientational disorder and inter-layer distances. We will report relevant inputs for numerical studies of the vertical transport in graphene/h-BN heterostructures.

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Authors

  • Shayan Hemmatiyan

    Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA

  • Xingyuan Pan

    Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA, Texas A\&M University

  • Marco Polini

    NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy, NEST-CNR-INFM and Scuola Normale Superiore, I-56126 Pisa, Italy, NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore

  • Allan MacDonald

    The University of Texas at Austin, Department of Physics, University of Texas at Austin, University of Texas Austin, University of Texas at Austin, Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA

  • Jairo Sinova

    Texas A\&M University, USA; Institute of Physics, ASCR, CZ, Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA