Conductance Modulation across the Metal-Insulator Transition in Single Nanowire Devices of doped-VO$_{2}$ Gated with Ionic Liquid

Studies of the effects of charge modulation in VO$_2$ systems may provide useful insights into the microscopic mechanisms behind its metal-insulator transition (MIT). Recently, ionic liquid (IL) has become a popular material for gating nanodevices due to its superior charge accumulation capabilities. Thus, using IL to gate single nanowires of W-doped-VO$_2$, we systematically study the modulation of electrical transport across the temperature-driven and voltage-driven MIT as a function of gate voltage. We report the manifestation of hysteresis loops, which show an unprecedented modulation of resistance and current by as large as 20\%. Moreover, we show that the largest modulation loop coincides with the largest changes in resistance across the temperature-driven MIT suggesting that the memory behavior in VO$_2$ and its MIT are closely linked. Similar behavior is also observed across the voltage-driven MIT. These studies lay the ground work for an alternative approach to understanding the mechanisms behind the MIT in VO$_2$ systems when driven by different external parameters.