Magnetoconductance in high-mobility topological insulator Bi2Se3 devices

ORAL

Abstract

We report the fabrication and measurement of gate-tunable high mobility exfoliated ($<$100nm thick) Bi$_{2}$Se$_{3}$ devices. We measure electronic transport of these devices in magnetic fields up to 35T, and find a complex pattern of quantum oscillations consistent with both the surface and the bulk channels. We study the dependence of the oscillations on the magnetic field angle and gate voltage and discuss models for coexistence of surface and bulk oscillations.

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Authors

  • H. Steinberg

    MIT, Department of Physics, MIT, Cambridge, USA

  • V. Fatemi

    MIT, Department of Physics, MIT, Department of Physics, MIT, Cambridge, USA

  • Javier D. Sanchez-Yamagishi

    MIT, Department of Physics, MIT

  • Lucas Orona

    MIT

  • Pablo Jarillo-Herrero

    MIT, Massachusetts Institute of Techology, Physics Department, MIT, Cambridge, MA, Department of Physics, MIT, Cambridge, USA, Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA, Massachusetts Institute of Technology