Surface-dominated conduction in a 6nm-thick Bi2Se3 thin

ORAL

Abstract

We report a direct observation of surface dominated conduction in an intrinsic Bi$_{2}$Se$_{3}$ thin film with a thickness of 6 quintuple layers (QLs) grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy (MBE). Shubnikov-de Haas (SdH) oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 +/-5 meV above the Dirac point, in agreement with 70 +/- 20 meV obtained from scanning tunneling spectroscopies (STS). Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states.

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Authors

  • Liang He

    UCLA Electrical Engineering

  • Xinxin Yu

    UCLA Electrical Engineering, University of California, Los Angeles

  • Xufeng Kou

    UCLA Electrical Engineering, University of California, Los Angeles

  • Murong Lang

    UCLA Electrical Engineering, University of California, Los Angeles

  • Kang Wang

    UCLA Electrical Engineering, University of California, Los Angeles

  • Faxian Xiu

    Iowa State University, Department of Electrical and Computer Engineering, Iowa State University

  • M.L. Teague

    CalTech, department of Physics, Dept. of Physics, Caltech, Pasadena, CA 91125, USA

  • Nai-Chang Yeh

    CalTech, department of Physics