Ferroelectric control of two dimensional electron gas in oxide heterointerface

Oxide heterointerfaces are emerging as one of the most exciting materials systems in condensed-matter science. One remarkable example is the LaAlO$_{3}$ /SrTiO$_{3}$ (LAO/STO) interface, a model system in which a highly mobile electron gas forms between two band insulators. Our study to manipulate the conductivity at this interface by using ferroeletricity of Pb(Zr,Ti)O$_{3}$. Our transport data strongly suggests that down polarization direction depletes the conducting interface of LAO/STO. After switching the polarization direction (up), it becomes accumulation. In addition, our experiments show there is obvious the band structure changed by cross-sectional scanning tunneling microscopy and combining with X-ray photoelectron spectroscopy (XPS) measurements. The transport properties are measured to build up the connection between macroscopic properties and local electronic structures that have been applied to study this structure. Controlling the conductivity of this oxide interface suggests that this technique may not only extend more generally to other oxide systems but also open much potential to ferroelectric field effect transistors.