Coherence in a transmon qubit with epitaxial tunnel junctions

ORAL

Abstract

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time $T_1$ is $.72-.86\;\rm{\mu sec}$ and the ensemble dephasing time $T_2^*$ is slightly larger than $T_1$. The dephasing time $T_2$ ($1.36\;\rm{\mu sec}$) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

Authors

  • Martin Weides

    National Institute of Standards and Technology, Boulder, CO 80309-044, USA, National Institute of Standards and Technology

  • Jeffrey Kline

    National Institute of Standards and Technology

  • Michael Vissers

    National Institute of Standards and Technology, Boulder, CO, National Institute of Standards and Technology

  • Martin Sandberg

    National institute of Standards and Technology, Boulder, CO 80305, National Institute of Standards and Technology

  • David Wisbey

    Saint Louis University

  • David Pappas

    National Institute of Standards and Technology

  • Blake R. Johnson

    Raytheon BBN Technologies, Disruptive Information Processing Technologies Group, Raytheon BBN Technologies

  • T. Ohki

    Raytheon BBN Technologies, Disruptive Information Processing Technologies Group, Raytheon BBN Technologies