In-plane magnetotransport in gapped bilayer graphene

The tunability of the band gap in bilayer graphene using a perpendicular electric field makes this material a promising candidate for future carbon electronics.\footnote{J. B. Oostinga et al., \emph{ Nat. Mat.}, \textbf{7}, 151 (2007) Y. Zhang et al., \emph{Nature}, \textbf{459}, 820 (2009)} Recent studies show that the residual conductivity at low temperature in the gapped state with zero total carrier density is a result of hopping transport.\footnote{T. Taychatanapat and P. Jarillo-Herrero, \emph{Phys. Rev. Lett.}, \textbf{105}, 166601, (2010)} We have studied the transport in this regime as a function of an in-plane magnetic field. We find a strikingly strong positive magnetoresistance that leads to a increase of the resistance by an order of magnitude at 10 Teslas in-plane magnetic field compared to the value at 0 T. The temperature dependence of the resistance is well described by variable range hopping transport for all magnetic field values, and suggests that the hopping range is strongly dependent on the in-plane magnetic field.