Scalable templated growth of graphene patterns on SiC and their electronic properties

ORAL

Abstract

Conventional graphene growth research focuses on SiC on-axis surfaces: SiC (0001) and (000-1). In our previous work, we showed that graphene can be selectively grown on off-axis SiC crystal facets, demonstrated the possibility for templated graphene growth. Here we show scalable production of various devices made with this technique, such as graphene nanoribbons, Hall bars and Aharonov--Bohm rings. Graphene and SiC crystal facets are characterized with SEM and SPM tools. Shubnikov-de Haas oscillations and other phase coherent transport phenomena are observed at low temperature. These observations indicate that the structured epitaxial graphene growth can be a viable method for graphene electronics.

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Authors

  • Ming Ruan

    School of Physics, Georgia Institute of Technology

  • James Palmer

    School of Physics, Georgia Institute of Technology

  • John Hankinson

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology

  • Yike Hu

    School of Physics, Georgia Institute of Technology

  • Baiqian Zhang

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology

  • Zelei Guo

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology

  • Rui Dong

    Georgia Institute of Technology, School of Physics, Georgia Institute of Technology

  • Anton Sidorov

    School of Physics, Georgia Institute of Technology

  • Zhigang Jiang

    School of Physics, Georgia Institute of Technology

  • Claire Berger

    Georgia Institute of Technology, CNRS- Institut N\'eel, Grenoble, France \& School of Physics, Georgia Institute of Technology

  • Walt de Heer

    School of Physics, Georgia Institute of Technology