Writing Graphene Nanoribbons on SiC by Selective Graphitization

We describe a new technique for selective graphene growth onto 4H- and 6H-SiC by ion implan- tation. The presented technique is as easy as patterning (ion implanting) regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T$_{G})$ of SiC. We find that ion implantation of SiC lowers the T$_{G}$ of SiC, allowing selective graphene growth at temperatures below the T$_{G}$ of pristine SiC and above T$_{G}$ of implanted SiC. Presented results provide a new technique to pattern device structures ranging from nanometers to microns in size without using conventional lithography and chemical processing.