Growth and oxygen doping of thin film FeTe by Molecular Beam Epitaxy

ORAL

Abstract

FeTe is isomorphic to FeSe, a representative of the 11 family of iron based superconductors. While not a superconductor itself, FeTe, particularly in thin film form, undergoes a superconducting transition when doped with oxygen. In this presentation, we will discuss the growth of FeTe by MBE and various schemes we used to dope the samples. Evidence from our investigation suggests that FeTe films are doped via an oxygen diffusion process which is strongly activated by temperature.

Authors

  • Mao Zheng

    University of Illinis Urbana-Champaign

  • Can Zhang

    University of Illinis Urbana-Champaign

  • Hefei Hu

    University of Illinis Urbana-Champaign, University of Illinois at Urbana-Champaign

  • Jian-Min Zuo

    University of Illinis Urbana-Champaign

  • James N. Eckstein

    University of Illinois Urbana Champaign, University of Illinis Urbana-Champaign, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign