Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
ORAL
Abstract
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Authors
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Kevin Garello
Catalan Institute of Nanotechnology (ICN-CIN2), E-08193 Barcelona, Spain
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I.M. Miron
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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G. Gaudin
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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P.J. Zermatten
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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M. Costache
Catalan Institute of Nanotechnology (ICN-CIN2), E-08193 Barcelona, Spain
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S. Auffret
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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Sebastien Bandera
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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B. Rodmacq
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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A. Schuhl
SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France
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P. Gambardella
Catalan Institute of Nanotecnology, Catalan Institute of Nanotechnology (ICN-CIN2);Universitat Autonoma de Barcelona; Instituci\'o Catalana de Recerca i Estudis Avan\c{c}ats (ICREA)