Disorder-induced inhomogeneity in bilayer graphene

We describe the effect of charge density inhomgeneity (electron and hole puddles) and a spatially fluctuating band gap caused by charged impurity disorder in bilayer graphene. We derive a phenomenological averaging technique to calculate $\frac{d\mu}{dn}$ in the presence of this disorder and apply it recent experimental measurements in suspended bilayer graphene. This work was done in collaboration with S. Das Sarma, E. Hwang, and H. Min.