Direct determination of the dominant scatterer in graphene on silicon oxide

Previously the density of native scatterers in graphene on silicon oxide was shown to be proportional to the number of adsorption sites for atomic hydrogen [1]. However, this study provided limited information about the sites in graphene with affinity to atomic hydrogen. We employed a detailed temperature programmed desorption study on hydrogen-dosed graphene sheets. The determined desorption energy is used to reveal the nature of the dominant scatterer in graphene on silicon oxide. \\[4pt] [1] J. Katoch, J.H. Chen, R.Tsuchikawa, C.W. Smith, E.R. Mucciolo, and M. Ishigami, \textit{Uncovering the dominant scatterer in graphene sheets on SiO$_{2}$}, Physical Review B Rapid Communications, 82, 081417 (2010).