MBE growth and transport of the topologically tunable (Bi$_{1-x}$ In $_{x})_{2}$Se$_{3}$ system

A current challenge in the field of topological insulators (TI) is identifying a clear transport signal of the surface conduction. The structural similarity between Bi$_{2}$Se$_{3}$ and In$_{2}$Se$_{3}$ allowed us to combine the two to obtain (Bi$_{1-x}$ In $_{x})_{2}$Se$_{3}$; Bi$_{2}$Se$_{3}$ has inverted bands, and thus is a non-trivial insulator. In$_{2}$Se$_{3}$ has no inverted bands and is therefore a trivial band insulator with energy gap 1.3-1.9eV. The mixing ratio x can be thought of as a knob to switch the system from a trivial to a non-trivial state. I will briefly discuss our scheme for producing atomically smooth molecular beam epitaxial grown thin films. I will also discuss our work on transport in the TI-to-non TI regime, and the metal to insulator regime, and compare these results with angle resolved photo emission spectroscopy data.